Biploar resistive-switching memory with a single diode per memory cell
US8072795B1 · kind B1 · utility
23Cited by
14References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.