Patent · US Active

3-D integrated semiconductor device comprising intermediate heat spreading capabilities

US8080866B2 · kind B2 · utility

5Cited by

0References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Thomas Werner · Radebeul, DE
Michael Grillberger · Radebeul, DE
Frank Feustel · Dresden, DE

Key dates

Filing date	Jul 21, 2009
Grant date	Dec 20, 2011
Priority date	—
Expiry date	Dec 3, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1305
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a three-dimensional chip configuration, a heat spreading material may be positioned between adjacent chips and also between a chip and a carrier substrate, thereby significantly enhancing heat dissipation capability. Furthermore, appropriately sized and positioned through holes in the heat spreading material may enable electrical chip-to-chip connections, while responding thermally conductive connectors may extend to the heat sink without actually contacting the corresponding chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.