Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
US8084367B2 · kind B2 · utility
7Cited by
12References
31Claims
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Key dates
| Filing date | May 23, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.