Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
US8105465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.