Methods of forming capacitors
US8105896B2 · kind B2 · utility
3Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Mar 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.