Non-volatile resistive-switching memories
US8129704B2 · kind B2 · utility
14Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.