Shallow trench isolation etch process

US8133817B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hiroki Sasano · Sunnyvale, US
• Meihua Shen · Fremont, US
• Radhika Mani · Fremont, US
• Sunil Srinivasan · Milpitas, US
• Daehee Weon · Cupertino, US
• Nicolas Gani · Milpitas, US
• Shashank Deshmukh · San Jose, US
• Anisul Khan · Sunnyvale, US

Key dates

• Filing date: Nov 30, 2008
• Grant date: Mar 13, 2012
• Expiry date: Jun 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas.