Interconnect structure for semiconductor devices

US8138538B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Hans-Peter Moll · Dresden, DE
• Gouri Sankar Kar · Leuven, BE
• Martin Popp · Dresden, DE
• Lars Heineck · Dresden, DE
• Peter Lahnor · Dresden, DE
• Arnd Scholz · Poughkeepsie, US
• Stefan Jakschik · Kessel-Lo, BE
• Wolfgang Roesner · Austin, US
• Gerhard Enders · Glen Allen, US
• Werner Graf · Chur, CH
• Peter Baars · Dresden, DE
• Klaus Muemmler · Dresden, DE
• Bernd Hintze · Rohrbach, DE
• Andrei Josiek · Dresden, DE

Key dates

• Filing date: Oct 10, 2008
• Grant date: Mar 20, 2012
• Expiry date: Apr 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.