Methods for forming resistive switching memory elements by heating deposited layers

US8143092B2 · kind B2 · utility

Inventors

• Pragati Kumar · Santa Clara, US
• Sean Barstow · San Jose, US
• Sunil Shanker · Santa Clara, US
• Tony P. Chiang · Campbell, US

Key dates

• Filing date: Mar 9, 2009
• Grant date: Mar 27, 2012
• Expiry date: Mar 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.