One hundred millimeter single crystal silicon carbide wafer
US8147991B2 · kind B2 · utility
14Cited by
39References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2010 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | May 3, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.