Methods for fabricating group III nitride structures with a cluster tool
US8183132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2010 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Apr 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.