Film formation method and apparatus
US8216648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2010 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Nov 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.