Patent · US Active

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

US8227266B2 · kind B2 · utility

3Cited by

24References

7Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Anthony Mowry · Kyle, US
Casey Scott · Dresden, DE
Vassilios Papageorgiou · Austin, US
Andy Wei · Queensbury, US
Markus Lenski · Dresden, DE
Andreas Gehring · Dresden, DE

Key dates

Filing date	Mar 3, 2010
Grant date	Jul 24, 2012
Priority date	—
Expiry date	Jan 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.