Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures

US8236706B2 · kind B2 · utility

Assignee

• Mattson Technology, Inc. · US

Inventors

• Bruce W. Peuse · Redwood City, US
• Yaozhi Hu · San Jose, US
• Paul Janis Timans · Mountain View, US
• Guangcai Xing · Fremont, US
• Wilfried Lerch · Blaustein, DE
• Sing-Pin Tay · Ottawa, CA
• Stephen E. Savas · Pleasanton, US
• Georg Roters · Schneverdingen, DE
• Zsolt Nenyei · Blaustein, DE
• Ashok Sinha · Palo Alto, US

Key dates

• Filing date: Dec 12, 2008
• Grant date: Aug 7, 2012
• Expiry date: Mar 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02252
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.