Low temperature deposition of phase change memory materials
US8288198B2 · kind B2 · utility
8Cited by
24References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 12, 2007 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.