Resistive-switching memory element
US8298891B1 · kind B1 · utility
5Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Oct 21, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.