Method for integrating multiple threshold voltage devices for CMOS

US8309447B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Lisa F. Edge · Watervliet, US
• Balasubramanian S. Haran · Watervliet, US
• Hemanth Jagannathan · Niskayuna, US
• Ali Khakifirooz · Los Altos, US
• Vamsi K. Paruchuri · New York, US

Key dates

• Filing date: Aug 12, 2010
• Grant date: Nov 13, 2012
• Expiry date: Oct 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0188

Abstract

A method to achieve multiple threshold voltage (Vt) devices on the same semiconductor chip is disclosed. The method provides different threshold voltage devices using threshold voltage adjusting materials and a subsequent drive in anneal instead of directly doping the channel. As such, the method of the present disclosure avoids short channel penalties. Additionally, no ground plane/back gates are utilized in the present application thereby the method of the present disclosure can be easily integrated into current complementary metal oxide semiconductor (CMOS) processing technology.