Multilayer low reflectivity hard mask and process therefor
US8309457B2 · kind B2 · utility
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17References
10Claims
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Key dates
| Filing date | Oct 27, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.