Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors

US8338306B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jens Heinrich · Radeberg, DE
• Ralf Richter · Dresden, DE
• Katja Steffen · Dresden, DE
• Johannes Groschopf · Radebeul, DE
• Frank Seliger · Dresden, DE
• Andreas Ott · Erfurt, DE
• Manfred Heinz · Dresden, DE
• Andy Wei · Queensbury, US

Key dates

• Filing date: Sep 21, 2010
• Grant date: Dec 25, 2012
• Expiry date: Jun 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.