Film formation method and apparatus for semiconductor process
US8343594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 27, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.