Phase change memory having one or more non-constant doping profiles
US8363463B2 · kind B2 · utility
13Cited by
234References
10Claims
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Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.