Device structure and manufacturing method using HDP deposited using deposited source-body implant block

US8372708B2 · kind B2 · utility

Inventors

• Anup Bhalla · Santa Clara, US
• Francois Hebert · San Mateo, US
• Sung-Shan Tai · San Jose, US
• Sik Lui · Sunnyvale, US

Key dates

• Filing date: Oct 4, 2011
• Grant date: Feb 12, 2013
• Expiry date: Oct 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.