Pulsed plasma high aspect ratio dielectric process
US8382999B2 · kind B2 · utility
51Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 23, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Feb 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.