Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions

US8399352B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thomas Werner · Radebeul, DE
• Peter Baars · Dresden, DE
• Frank Feustel · Dresden, DE

Key dates

• Filing date: Dec 20, 2011
• Grant date: Mar 19, 2013
• Expiry date: Dec 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming metal lines of the metal zero level, a reduced bottom width and an increased top width may be achieved by using appropriate patterning regimes, for instance using a spacer structure after forming an upper trench portion with a top width, or forming the lower portion of the trenches and subsequently applying a further mask and etch regime in which the top width is implemented. In this manner, metal lines connecting to self-aligned contact bars may be provided so as to exhibit a bottom width of 20 nm and less, while the top width may allow reliable contact to any vias of the metallization system.