Post-deposition cleaning methods and formulations for substrates with cap layers
US8404626B2 · kind B2 · utility
15Cited by
12References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2008 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Sep 9, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.