High density plasma etchback process for advanced metallization applications

US8431033B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Chunming Zhou · Milpitas, US
• Liqi Wu · San Jose, US
• Karthik S. Colinjivadi · Dublin, US
• Emery Kuo · Sunnyvale, US
• Huatan Qiu · Lake Oswego, US
• KieJin Park · San Jose, US

Key dates

• Filing date: Dec 21, 2010
• Grant date: Apr 30, 2013
• Expiry date: May 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76873
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.