Approach to integrate Schottky in MOSFET
US8431470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2011 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
An integrated structure combines field effect transistors and a Schottky diode. Trenches formed into a substrate composition extend along a depth of the substrate composition forming mesas therebetween. Each trench is filled with conductive material separated from the trench walls by dielectric material forming a gate region. Two first conductivity type body regions inside each mesa form wells partly into the depth of the substrate composition. An exposed portion of the substrate composition separates the body regions. Second conductivity type source regions inside each body region are adjacent to and on opposite sides of each well. Schottky barrier metal inside each well forms Schottky junctions at interfaces with exposed vertical sidewalls of the exposed portion of the substrate composition separating the body regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.