Imaging devices, methods of forming same, and methods of forming semiconductor device structures

US8440371B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Yuan He · Boise, US
• Kaveri Jain · Boise, US
• Lijing Gou · Boise, US
• Zishu Zhang · Boise, US
• Anton J. deVilliers · Boise, US
• Michael Hyatt · Boise, US
• Jianming Zhou · Suzhou, CN
• Scott L. Light · Boise, US
• Dan B. Millward · Boise, US

Key dates

• Filing date: Jan 7, 2011
• Grant date: May 14, 2013
• Expiry date: May 18, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49002
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.