Resistive-switching nonvolatile memory elements
US8441838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Dec 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory elements are provided comprising switching metal oxides. The nonvolatile memory elements may be formed in one or more layers on an integrated circuit. Each memory element may have a first conductive layer, a metal oxide layer, and a second conductive layer. Electrical devices may be coupled in series with the memory elements. The first conductive layer may be formed from a metal nitride. The metal oxide layer may contain the same metal as the first conductive layer. The metal oxide may form an ohmic contact or a Schottky contact with the first conductive layer. The second conductive layer may form an ohmic contact or a Schottky contact with the metal oxide layer. The first conductive layer, the metal oxide layer, and the second conductive layer may include sublayers. The second conductive layer may include an adhesion or barrier layer and a workfunction control layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.