Method and apparatus for protection against process-induced charging
US8445966B2 · kind B2 · utility
4Cited by
15References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2006 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | May 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.