Patent · US Active

Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach

US8450163B2 · kind B2 · utility

1Cited by

3References

19Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sven Beyer · Dresden, DE
Klaus Hempel · Dresden, DE
Roland Stejskal · Freital, DE
Andy Wei · Queensbury, US
Thilo Scheiper · Dresden, DE
Andreas Kurz · Oberursel, DE
Uwe Griebenow · Markkleeberg, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Dec 8, 2010
Grant date	May 28, 2013
Priority date	—
Expiry date	Feb 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a replacement gate approach, the semiconductor material or at least a significant portion thereof in a non-transistor structure, such as a precision resistor, an electronic fuse and the like, may be preserved upon replacing the semiconductor material in the gate electrode structures. To this end, an appropriate dielectric material may be provided at least prior to the removal of the semiconductor material in the gate electrode structures, without requiring significant modifications of established replacement gate approaches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.