Semiconductor substrate and semiconductor device
US8492879B2 · kind B2 · utility
1Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Oct 6, 2008 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jan 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.