Methods for high temperature etching a high-K material gate structure
US8501626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.