Modification of REO by subsequent III-N EPI process
US8501635B1 · kind B1 · utility
8Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Sep 29, 2012 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Sep 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.