Method of controlling etch microloading for a tungsten-containing layer
US8518282B2 · kind B2 · utility
5Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2008 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Nov 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.