Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

US8530894B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Anthony Mowry · Kyle, US
• Casey Scott · Dresden, DE
• Vassilios Papageorgiou · Austin, US
• Andy Wei · Queensbury, US
• Markus Lenski · Dresden, DE
• Andreas Gehring · Dresden, DE

Key dates

• Filing date: May 18, 2012
• Grant date: Sep 10, 2013
• Expiry date: May 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.