Patent · US Active

Methods of forming stressed silicon-carbon areas in an NMOS transistor

US8536034B2 · kind B2 · utility

4Cited by

2References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Stefan Flachowsky · Dresden, DE
Ralf Illgen · Dresden, DE
Thilo Scheiper · Dresden, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Aug 24, 2011
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Oct 19, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/797
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed herein are various methods of forming stressed silicon-carbon areas in an NMOS transistor device. In one example, a method disclosed herein includes forming a layer of amorphous carbon above a surface of a semiconducting substrate comprising a plurality of N-doped regions and performing an ion implantation process on the layer of amorphous carbon to dislodge carbon atoms from the layer of amorphous carbon and to drive the dislodged carbon atoms into the N-doped regions in the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.