Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
US8541855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2011 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3909
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.