Trench shielding structure for semiconductor device and method
US8552535B2 · kind B2 · utility
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13References
17Claims
0Family size
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Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.