Non-planar device having uniaxially strained semiconductor body and method of making same

US8558279B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Stephen M. Cea · Hillsboro, US
• Roza Kotlyar · Portland, US
• Jack T. Kavalieros · Portland, US
• Martin D. Giles · Portland, US
• Tahir Ghani · Portland, US
• Kelin J. Kuhn · Beaverton, US
• Markus Kuhn · Hillsboro, US
• Nancy Zelick · Portland, US

Key dates

• Filing date: Sep 23, 2010
• Grant date: Oct 15, 2013
• Expiry date: Jun 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/798

Abstract

A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.