Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8563424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.