Cut-very-last dual-epi flow

US8569152B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Veeraraghavan S. Basker · Schenectady, US
• Huiming Bu · Millwood, US
• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Nicolas Loubet · Guilderland, US
• Shom Ponoth · Irvine, US
• Stefan Schmitz · Stuttgart, DE
• Theodorus E. Standaert · Clifton Park, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Jun 4, 2012
• Grant date: Oct 29, 2013
• Expiry date: Jun 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0243

Abstract

A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered portion of the array of fins. Adding a second epitaxial material to the fins in the uncovered portion of the array of fins is included in the method. The method also includes covering a second portion of the array of fins using a second masking material and performing a directional etch using the first masking material and the second masking material. Apparatus and computer program products are also described.