Method of forming non-volatile resistive-switching memories
US8574956B2 · kind B2 · utility
3Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.