Methods of forming FinFET devices with alternative channel materials

US8580642B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Witold P. Maszara · معلمی نژاد, US
• Ajey Poovannummoottil Jacob · Watervliet, US
• Nicholas V. LiCausi · Watervliet, US
• Jody A. Fronheiser · Delmar, US
• Kerem Akarvardar · Grenoble, FR

Key dates

• Filing date: May 21, 2012
• Grant date: Nov 12, 2013
• Expiry date: Jun 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a planarization process on the layer of insulating material to expose the patterned hard, performing a second etching process to remove the hard mask layer and to define a cavity within the layer of insulating material, forming a second portion of the fin within the cavity, wherein the second portion of the fin is comprised of a semiconducting material that is different than the substrate, and performing a third etching process on the layer of insulating material such that an upper surface of the insulating material is below an upper surface of the second portion of the fin.