Semiconductor device having contact layer providing electrical connections

US8598633B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Marc Tarabbia · Austin, US
• James B. Gullette · Wadesboro, US
• Mahbub Rashed · Cupertino, US
• David Doman · Austin, US
• Irene Y. Lin · Los Altos Hills, US
• Ingolf Lorenz · Radeberg, DE
• Larry Ho · Cupertino, US
• Chinh Nguyen · San Jose, US
• Jeff Kim · San Jose, US
• Jongwook Kye · Pleasanton, US
• Yuansheng Ma · Santa Clara, US
• Yunfei Deng · Berkeley, US
• Rod Augur · Hopewell Junction, US
• Seung-Hyun Rhee · Fishkill, US
• Jason E. Stephens · Cohoes, US
• Scott Johnson · Wappingers Falls, US
• Subramani Kengeri · Norwood, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Jan 16, 2012
• Grant date: Dec 3, 2013
• Expiry date: Jan 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor.