Pulsed bias plasma process to control microloading
US8609546B2 · kind B2 · utility
22Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2008 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.