CMOS structures and processes based on selective thinning
US8614128B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Aug 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating semiconductor devices and devices therefrom are provided. A method includes providing a substrate having a semiconducting surface with first and second layers, where the semiconducting surface has a plurality of active regions comprising first and second active regions. In the first active region, the first layer is an undoped layer and the second layer is a highly doped screening layer. The method also includes removing a part of the first layer to reduce a thickness of the substantially undoped layer for at least a portion of the first active region without a corresponding thickness reduction of the first layer in the second active region. The method additionally includes forming semiconductor devices in the plurality of active regions. In the method, the part of the first layer removed is selected based on a threshold voltage adjustment required for the substrate in the portion of the first active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.