Field effect transistor device
US8618617B2 · kind B2 · utility
2Cited by
36References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 4, 2013 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.