In-line wafer thickness sensing
US8628376B2 · kind B2 · utility
7Cited by
15References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2009 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | May 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.