Method for metal deposition using hydrogen plasma
US8637410B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Apr 8, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.